Technique for forming a passivation layer prior to...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S751000, C257SE21570, C257SE21520

Reexamination Certificate

active

11112509

ABSTRACT:
By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment, the wet chemical process may be performed on the basis of fluoric acid and triazole or a compound thereof.

REFERENCES:
patent: 6123088 (2000-09-01), Ho
patent: 6458516 (2002-10-01), Ye et al.
patent: 6531382 (2003-03-01), Cheng et al.
patent: 6554914 (2003-04-01), Rozbicki et al.
patent: 6605549 (2003-08-01), Leu et al.
patent: 6692580 (2004-02-01), Wu et al.
patent: 6815823 (2004-11-01), Teh et al.
patent: 2001/0021489 (2001-09-01), Wakiya et al.
patent: 2003/0010751 (2003-01-01), Wu
patent: 2004/0029051 (2004-02-01), Koita et al.
patent: 2004/0106531 (2004-06-01), Kanno et al.
patent: 2004/0171211 (2004-09-01), Lee et al.
patent: 2005/0014667 (2005-01-01), Aoyama et al.
patent: 2005/0139419 (2005-06-01), Green
patent: 2005/0245409 (2005-11-01), Cernat et al.
patent: 1 447 440 (2004-08-01), None
patent: 08202052 (1996-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Technique for forming a passivation layer prior to... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique for forming a passivation layer prior to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for forming a passivation layer prior to... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3854646

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.