Technique for forming a gate electrode by using a hard mask

Details Technique for forming a gate electrode by using a hard mask Technique for forming a gate electrode by using a hard mask

2006-12-19

2006-12-19

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S299000, C438S301000, C257SE21635

Reexamination Certificate

active

07151055

ABSTRACT:
The anisotropic etch process for forming circuit elements such as a gate electrode is accomplished by using a hard mask instead of a resist feature, thereby avoiding a complex resist trim process when critical dimensions are required, which are well below the resolution of the involved photolithography. Moreover, the critical dimension may be adjusted by means of a deposition process rather than by a resist trim process.

REFERENCES:
patent: 5946579 (1999-08-01), Fulford et al.
patent: 6156632 (2000-12-01), Schuegraf
patent: 2002/0177280 (2002-11-01), Schoenborn

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