Technique for forming a copper-based contact layer without a...

Details Technique for forming a copper-based contact layer without a... Technique for forming a copper-based contact layer without a...

2006-05-08

2009-08-04

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S781000, C257SE23161, C438S687000

Reexamination Certificate

active

07569937

ABSTRACT:
By directly forming an underbump metallization layer on a copper-based contact region, the formation of any other terminal metals, such as aluminum and corresponding adhesion/barrier layers may be avoided. Consequently, the thermal and electrical behavior of the resulting bump structure may be improved, while process complexity may significantly be reduced.

REFERENCES:
patent: 6649533 (2003-11-01), Iacoponi
patent: 2003/0073300 (2003-04-01), Chen et al.
patent: 2004/0157450 (2004-08-01), Bojkov et al.
patent: 2004/0182915 (2004-09-01), Bachman et al.
patent: 2005/0006759 (2005-01-01), Huang
patent: 2006/0087039 (2006-04-01), Cheng et al.
patent: 1 321 982 (2002-12-01), None

Affiliated with

Also associated with

Rating

Technique for forming a copper-based contact layer without a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique for forming a copper-based contact layer without a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for forming a copper-based contact layer without a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4131520