Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-04-20
2008-09-09
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S600000, C257SE21521, C257SE21524, C257SE21525, C438S011000, C438S014000, C438S018000, C700S121000, C700S108000
Reexamination Certificate
active
07423288
ABSTRACT:
The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter of the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.
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Aghababazadeh Majid
Estabil Jose J.
Pakdaman Nader
Steinbrueck Gary L.
Vickers James S.
Shemwell Mahamedi LLP
tau-Metrix, Inc.
Tran Long K
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