Technique for epitaxial growth of oriented thin films of polydia

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156603, 156DIG73, 156DIG113, 385130, 385141, C30B 2954

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active

052078620

ABSTRACT:
A technique for the preparation of an oriented thin film polydiacetylene suitable for use in channel waveguides involves depositing an alignment polymer upon a substrate, rubbing the surface thereof to effect orientation, depositing the polydiacetylene thereon and heating to a temperature just below the melting point thereof.

REFERENCES:
patent: 3839067 (1974-10-01), Sosnowski et al.
patent: 4238352 (1980-12-01), Patel
patent: 4431263 (1984-02-01), Garito
patent: 4531809 (1985-07-01), Carter et al.
patent: 4561726 (1985-12-01), Goodby et al.
patent: 4743659 (1988-05-01), Sandman et al.
patent: 4767169 (1988-08-01), Teng et al.
patent: 4787714 (1988-11-01), Greene et al.
patent: 4789622 (1988-12-01), Leyrer et al.
patent: 4808285 (1989-02-01), Chen et al.
patent: 4824522 (1989-04-01), Baker et al.
patent: 4834480 (1989-05-01), Baker et al.
patent: 4863763 (1989-09-01), Takeda et al.

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