Technique for determining the end point of an etching process

Details Technique for determining the end point of an etching process Technique for determining the end point of an etching process

1984-01-30

1985-01-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156656, 156665, 204192E, 356445, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

044964250

ABSTRACT:
A method for detecting the end point of the plasma etching of a pattern (36) in an aluminum layer (33) on a silicon wafer (16). The pattern (36) and portions of a Fresnel zone plate (30) are simultaneously etched in the aluminum layer (33). The intensity of the light reflected from the Fresnel zone plate (30) during plasma etching is monitored and the etching process terminated when the intensity falls below a predetermined level.

REFERENCES:
patent: 3945825 (1976-03-01), Gale et al.
patent: 4039370 (1977-08-01), Kleinknecht
patent: 4179622 (1979-12-01), Moritz
patent: 4198261 (1980-04-01), Basta et al.
patent: 4317698 (1982-03-01), Christol et al.
patent: 4444618 (1984-04-01), Saia et al.
patent: 4454001 (1984-06-01), Sternheim
Jenkins et al., Fundamentals of Optics, McGraw-Hill Book Co., 1957, Chapter 18, "Fresnel Diffraction", pp. 353-363.

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