Technique for correcting hotspots in mask patterns and write...

Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Analysis and verification

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C716S053000, C716S054000, C716S055000, C716S111000, C700S120000, C700S121000, C430S005000, C378S035000

Reexamination Certificate

active

08082525

ABSTRACT:
Embodiments of a method for determining a mask pattern to be used on a photo-mask in a lithography process are described. This method may be performed by a computer system. During operation, this computer system receives at least a portion of a first mask pattern including first regions that violate pre-determined rules associated with the photo-mask. Next, the computer system determines a second mask pattern based on at least the portion of the first mask pattern, where the second mask pattern includes second regions that are estimated to comply with the pre-determined rules. Note that the second regions correspond to the first regions, and the second mask pattern is determined using a different technique than that used to determine the first mask pattern.

REFERENCES:
patent: 7062748 (2006-06-01), Mellmann
patent: 7784015 (2010-08-01), Pitts
patent: 7865864 (2011-01-01), Banerjee et al.
patent: 2004/0268282 (2004-12-01), Rittman et al.
patent: 2005/0014074 (2005-01-01), Liebmann et al.
patent: 2005/0022151 (2005-01-01), Rittman et al.
patent: 2005/0050511 (2005-03-01), Mellmann
patent: 2006/0024590 (2006-02-01), Sandhu
patent: 2006/0107248 (2006-05-01), Liebmann et al.
patent: 2006/0122724 (2006-06-01), Croke et al.
patent: 2006/0150131 (2006-07-01), Lai et al.
patent: 2007/0198963 (2007-08-01), Granik et al.
patent: 2008/0005718 (2008-01-01), Green
patent: 2008/0063948 (2008-03-01), O'Brien
patent: 2009/0199151 (2009-08-01), Banerjee et al.
patent: WO 2008097219 (2008-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Technique for correcting hotspots in mask patterns and write... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique for correcting hotspots in mask patterns and write..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for correcting hotspots in mask patterns and write... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4257273

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.