Technique for confining secondary electrons in plasma-based...

Radiant energy – With charged particle beam deflection or focussing – Magnetic lens

Reexamination Certificate

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C250S3960ML, C250S399000, C250S400000

Reexamination Certificate

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07667208

ABSTRACT:
A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.

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