Radiant energy – With charged particle beam deflection or focussing – Magnetic lens
Reexamination Certificate
2006-10-17
2010-02-23
Vanore, David A (Department: 2881)
Radiant energy
With charged particle beam deflection or focussing
Magnetic lens
C250S3960ML, C250S399000, C250S400000
Reexamination Certificate
active
07667208
ABSTRACT:
A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.
REFERENCES:
patent: 5072125 (1991-12-01), Nakanishi et al.
patent: 5587587 (1996-12-01), Hashimoto
patent: 6375810 (2002-04-01), Hong
patent: 7132672 (2006-11-01), Walther et al.
patent: 7253417 (2007-08-01), Frosien et al.
patent: 7409043 (2008-08-01), Dunham et al.
patent: 7459681 (2008-12-01), Arai et al.
patent: 7507978 (2009-03-01), Vanderberg et al.
patent: 2006/0236931 (2006-10-01), Singh et al.
Vanore David A
Varian Semiconductor Equipment Associates Inc.
LandOfFree
Technique for confining secondary electrons in plasma-based... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Technique for confining secondary electrons in plasma-based..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for confining secondary electrons in plasma-based... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4234130