Technique for boron implantation

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S424000, C250S425000, C250S426000, C250S42300F, C438S510000, C438S513000, C438S514000, C438S515000, C438S516000, C423S289000, C423S294000, C423S276000

Reexamination Certificate

active

11227079

ABSTRACT:
A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

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