Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-07-08
2008-07-08
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S424000, C250S425000, C250S426000, C250S42300F, C438S510000, C438S513000, C438S514000, C438S515000, C438S516000, C423S289000, C423S294000, C423S276000
Reexamination Certificate
active
07397048
ABSTRACT:
A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
REFERENCES:
patent: 4483911 (1984-11-01), Ogawa et al.
patent: 4957773 (1990-09-01), Spencer et al.
patent: 5277932 (1994-01-01), Spencer
patent: 5468978 (1995-11-01), Dowben
patent: 5658834 (1997-08-01), Dowben
patent: 5977552 (1999-11-01), Foad
patent: 5993766 (1999-11-01), Tom et al.
patent: 6025611 (2000-02-01), Dowben
patent: 6440786 (2002-08-01), Dowben
patent: 6479828 (2002-11-01), Perel
patent: 6600177 (2003-07-01), Dowben
patent: 6905947 (2005-06-01), Goldberg
patent: 2002/0045300 (2002-04-01), Dowben
patent: 2002/0076918 (2002-06-01), Han et al.
patent: 2004/0119025 (2004-06-01), Klepper et al.
patent: 2005/0163693 (2005-07-01), Spielvogel et al.
patent: 2006/0097193 (2006-05-01), Horsky et al.
M.A. Foad, R. Webb, R. Smith, J. Matsuo, A. Al-Bayati, T. Shen-Wang, T. Cullis, Shallow junction formation by decaborane molecular ion implantation, J. Vac. Sci. Technol. B 18 (2000) 445-449.
K. Goto, J. Matsuo, T. Sugii, H. Minakata, I. Yamada, and T. Hisatsugu: Novel Shallow Junction Technology Using Decaborane (B10 H14). IEDM Tech. Dig., p. 435, 1996.
Fang Ziwei
Gupta Atul
Miller Timothy Jerome
Persing Harold M.
Singh Vikram
Berman Jack I.
Logie Michael J
Varian Semiconductor Equipment Associates Inc.
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