Tasin oxygen diffusion barrier in multilayer structures

Details Tasin oxygen diffusion barrier in multilayer structures Tasin oxygen diffusion barrier in multilayer structures

1996-06-21

1998-08-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257770, 257413, 257369, 257757, H01L 218238, H01L 2949

Patent

active

057961662

ABSTRACT:
A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.

REFERENCES:
patent: 4855798 (1989-08-01), Imamura
patent: 5170242 (1992-12-01), Stevens
patent: 5341016 (1994-08-01), Prall
patent: 5440173 (1995-08-01), Evans
patent: 5440174 (1995-08-01), Nishitsuji
patent: 5504041 (1996-04-01), Summerfelt
Reid et al, Thin Solid Films 236, (1993) pp. 319-324 "Evaluation of . . . (Mo, Ta, W)-Si-N . . . Metallizations".
P. J. Pokela et al., Thermal oxidation of amorphous ternary Ta.sub.36 Si.sub.14 N.sub.50 thin films, J. Appl. Phys. vol. 70, No. 5, 1 Sep. 1991, pp. 2828 -2832.

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