Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1996-12-30
1998-08-25
Breneman, R. Bruce
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429807, 20429808, 20429812, 20429818, 2042982, 20429823, 20429828, C23C 1434, C23C 1440
Patent
active
057980292
ABSTRACT:
In sputtering equipment, a pair of targets are positioned in spaced apart relation defining a space therebetween. Each of the targets forms an electrode that is connected to a voltage supply unit. The voltage generates an electric field between the target pair. Furthermore, a process gas is supplied to the space between the targets. As the gas flows through this space, the electric field excites the gas into a plasma state. The plasma, being proximate the targets, causes the material comprising the targets to be sputtered. Additionally, to increase the plasma density in the space between the targets, a magnetic field is applied orthogonally to the electric field. A substrate, upon which the target material is sputtered, is positioned within the sputtering equipment opposite the targets. Further, because the target surfaces from which the material is sputtered are not parallel to the substrate, sputtered particles strike the substrate from an oblique angle. Such oblique striking angles produce a thin film upon the substrate having improved step coverage.
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Applied Materials Inc.
Breneman R. Bruce
McDonald Rodney G.
Moser Raymond R.
Verplancken Donald
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