Target for reactive sputtering and film-forming method using the

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419217, 20429813, C23C 1434

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active

054893674

ABSTRACT:
A target for use in reactive sputtering for forming a film by a reaction with nitrogen, which is a target being composed substantially of titanium and nitrogen and having a nitrogen/titanium atomic ratio, N/Ti, of 0.20 to 0.95, and is used for forming a film whose nitrogen ratio is greater than a ratio of nitrogen to titanium in the target by a reaction with a sputtering gas containing nitrogen, and a method for forming a film, which uses the target.

REFERENCES:
patent: 4820393 (1989-04-01), Brat et al.
Patent Abstracts of Japan vol. 12, No. 301 (C-521)(3148) 16 Aug. 1988 & JP-A-63 72 866 (Nippon Steel Corp) 2 Apr. 1988.
Patent Abstracts of Japan vol. 013, No. 69 (C-569) 16 Feb. 1989 & JP-A-63 259 075 (Nippon Mining Co. Ltd) 26 Oct. 1988.
Journal of Vacuum Science and Technology, B vol. 5, No. 6 Nov. 1987, N.Y. U.S. pp. 1741-1747 XP9919 T. Brat et al `Characterization of Titanium Nitride Films Sputter Deposited from a High-Purity Nitride Target` p. 1743, left column, line 14-line 22.
Monthly Semiconductor World, pp. 56-60 (Mar. 1992).

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