Target for cathode sputtering and method of its production

Details Target for cathode sputtering and method of its production Target for cathode sputtering and method of its production

1993-08-16

1996-01-02

Breneman, R. Bruce

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

501126, 501134, 264 56, C04B 35457, C23C 1408

Patent

active

054805317

ABSTRACT:
Oxide-ceramic targets of partially reduced indium oxide-tin oxide mixtures are described. The targets provide high sputter performances, and they exhibit an essentially defined degree of reduction between 0.02 and 0.3, a density between 75 and 98% of the theoretical density and a specific electric resistance between 89.times.10.sup.-3 and 0.25.times.10.sup.-3 .OMEGA. cm. The degree of reduction must not deviate at any point on the target surface by more than 5% from the average degree of reduction of the target. The targets are produced by means of hot-pressing the oxide mixtures which were partially reduced beforehand in a special method step.

REFERENCES:
patent: 4647548 (1987-03-01), Klein
patent: 5071800 (1991-12-01), Iwamoto et al.
patent: 5094787 (1992-03-01), Nakajima et al.
patent: 5401701 (1995-03-01), Ogama et al.

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