Target comprising thickness profiling for an RF magnetron

Details Target comprising thickness profiling for an RF magnetron Target comprising thickness profiling for an RF magnetron

2005-07-12

2005-07-12

Versteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S298120, C204S298130, C204S298190, C204S298200

Reexamination Certificate

active

06916407

ABSTRACT:
Method for sputtering from a dielectric target (9) in a vacuum chamber (2) with a high frequency gas discharge, the target (9) being mounted on a cooled metallic back plate (10) and this back plate forming an electrode (10) supplied with high frequency, includes a target thickness (Td) profiled (15) differently over the surface such that in the regions of a desired decrease of the sputtering rate the target thickness (Td) is selected to be greater than in the remaining regions.

REFERENCES:
patent: 5693203 (1997-12-01), Ohhashi et al.
patent: 6497797 (2002-12-01), Kim
patent: 6682637 (2004-01-01), Heinz et al.

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