Tapered wet etching of contacts using a trilayer silox structure

Details Tapered wet etching of contacts using a trilayer silox structure Tapered wet etching of contacts using a trilayer silox structure

1988-05-13

1989-04-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 1566591, 156663, 357 231, 357 65, 437 43, 437180, 437238, 437240, B44C 122, C03C 1500, C03C 2501, H01L 21306

Patent

active

048183350

ABSTRACT:
A method for achieving tapered contact sidewalls by wet etching during fabrication of a semiconductor device is characterized by the addition of a second layer of undoped oxide to a bilayer sandwich deposited over the wafer of the device. The second layer of undoped oxide reduces the etch rate at the oxide/photoresist interface thereby providing gradual taper and improved metal step coverage. The reduced etch rate extends the utility of wet etching without changing etchant bath concentration or temperature.

REFERENCES:
patent: 3880684 (1975-04-01), Abe
patent: 4337115 (1982-06-01), Ikeda et al.
patent: 4461672 (1984-07-01), Musser
patent: 4535528 (1985-08-01), Chen et al.
patent: 4634494 (1987-01-01), Taji et al.
Sirken & Crabbe, "Tapering CVD SiO.sub.2 vias for improved metal step coverage using RIE", Electrochem. Soc. Proc. (1983) pp. 467-474.
Saia & Gorowitz, "Dry Etching of Tapered Contact Holes Using Multilayer Resist" J. Electrochem. Soc., Aug. 85, pp. 1954-1957

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