Tapered trench process

Details Tapered trench process Tapered trench process

1986-03-19

1987-09-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148DIG50, 156646, 156648, 156653, 156657, 1566591, 156662, 252 791, 427 38, 437225, 437228, 20419237, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046907297

ABSTRACT:
A plasma dry etch process for etching deep trenches in single crystal silicon material with controlled wall profile, for trench capacitors or trench isolation structures. HCl is used as an etchant under RIE conditions with a SiO.sub.2 hard mask. The SiO.sub.2 hard mask is forward sputtered during the course of the Si etch so as to slowly deposit SiO.sub.x (x<2) on the sidewalls of the silicon trench. Since the sidewall deposit shadows etching at the bottom of the trench near the sidewall, the effect of this gradual buildup is to produce a positively sloped trench sidewall without "grooving" the bottom of the trench, and without linewidth loss. This process avoids the prior art problems of mask undercut, which generates voids during subsequent refill processing, and grooving at the bottom of the trench, which is exceedingly deleterious to thin capacitor dielectric integrity.

REFERENCES:
patent: 4521275 (1985-06-01), Purdes
patent: 4533430 (1965-08-01), Bower

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