Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2009-06-30
2010-10-19
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S637000, C438S667000, C257SE21597
Reexamination Certificate
active
07816227
ABSTRACT:
An integrated circuit structure includes a substrate; a through-silicon via (TSV) in the substrate, the TSV being tapered; a hard mask region extending from a top surface of the substrate into the substrate, wherein the hard mask encircles a top portion of the TSV; dielectric layers over the substrate; and a metal post extending from a top surface of the dielectric layers to the TSV, wherein the metal post comprises same materials as the TSV.
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Chen Chen-Shien
Chen Chih-Hua
Ching Kai-Ming
Kuo Chen-Cheng
Quach Tuan N.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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