Tapered profile etching method

Details Tapered profile etching method Tapered profile etching method

1997-01-13

1999-04-13

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438701, 438719, 438725, 216 58, 216 67, 252 791, H01L 2100

Patent

active

058937579

ABSTRACT:
A method of etching an article having a substrate, an etchable film and a mask layer having a pattern formed therein includes the step of exposing the article to an etchant gas mixture which includes a halogen-containing gas and an inert gas. An etching profile is formed which is substantially smooth across an interface between the etchable film and the mask layer. The method is particularly useful in producing components of articles such as flat-panel displays.

REFERENCES:
patent: 3986912 (1976-10-01), Alcorn et al.
patent: 4436584 (1984-03-01), Bernacki et al.
patent: 4456501 (1984-06-01), Bayman et al.
patent: 4595452 (1986-06-01), Landau et al.
patent: 4631248 (1986-12-01), Pasch
patent: 4806199 (1989-02-01), Gualandris

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