Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Processing feature prior to imaging
Reexamination Certificate
2007-09-19
2010-11-02
Duda, Kathleen (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Processing feature prior to imaging
Reexamination Certificate
active
07824846
ABSTRACT:
A method and apparatus for forming a tapered photoresist edge. The method includes: forming a photoresist layer on a substrate; exposing a first annular region of the photoresist layer adjacent to a perimeter of the substrate to actinic radiation, the first annular region having a first outer perimeter proximate to a perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate, the actinic radiation gradually decreasing in intensity from the first outer perimeter to the first inner perimeter; and developing the exposed first annular region of the photoresist layer to form a tapered profile in a second annular region of the photoresist layer, the second annular region having a second perimeter proximate to the perimeter of the substrate and a second inner perimeter away from the substrate perimeter, the profile gradually increasing in thickness from the second outer perimeter to the second inner perimeter.
REFERENCES:
patent: 2005/0255702 (2005-11-01), Honeycutt et al.
patent: 2007/0003879 (2007-01-01), Chang et al.
Duda Kathleen
International Business Machines - Corporation
MacKinnon Ian D.
Schmeiser Olsen & Watts
Sullivan Caleen O
LandOfFree
Tapered edge bead removal process for immersion lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Tapered edge bead removal process for immersion lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tapered edge bead removal process for immersion lithography will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4170206