Tantalum and tantalum-based films formed using fluorine-containi

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

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427578, 427253, 427255, 4272557, 438682, 438683, 438685, C23C 1608, H01L 2144

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061399221

ABSTRACT:
A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) a reactant gas, and maintaining the temperature of the substrate within the chamber as from about 70.degree. C. to about 675.degree. C. for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I):

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