Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1997-03-26
1999-07-06
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427578, 427253, 427255, 4272551, 4272552, 4272557, C23C 1608
Patent
active
059195312
ABSTRACT:
A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) at least one carrier gas, and maintaining the temperature of the substrate within the chamber as from about 70.degree. C. to about 675.degree. C. for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I):
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Arkles Barry C.
Kaloyeros Alain E.
Beck Shrive
Gelest Inc.
Meeks Timothy
The Research Foundation of State University of New York
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