Tantalum amide complexes for depositing tantalum-containing...

Coating processes – Electrical product produced – Fluorescent or phosphorescent base coating

Reexamination Certificate

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C427S058000, C029S825000

Reexamination Certificate

active

11224588

ABSTRACT:
Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

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patent: 5711816 (1998-01-01), Kirlin et al.
patent: 5820664 (1998-10-01), Gardiner et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6552209 (2003-04-01), Lei et al.
patent: 6593484 (2003-07-01), Yasuhara et al.

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