Tantalum adhesion layer and reactive-ion-etch process for provid

Details Tantalum adhesion layer and reactive-ion-etch process for provid Tantalum adhesion layer and reactive-ion-etch process for provid

1997-10-02

1999-03-23

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430318, 427 96, G03F 726

Patent

active

058857508

ABSTRACT:
A method for providing a thin film metallization area on a substrate is disclosed comprising the steps of: depositing a Ta adhesion layer on the surface of the substrate seed layer, conducting a photo resist process on the Ta adhesion layer to define the thin film metallization area, including a remnant removal process to remove remnant photo resist process material in the thin film metallization area to the Ta adhesion layer, the Ta adhesion layer preventing the remnant removal from reaching the seed layer, conducting a Ta removal reactive-ion-etch process to remove the Ta adhesion layer in the thin film metallization area, so that the seed layer is exposed in the metallization area. A metal material may then be deposited in the metallization area.

REFERENCES:
patent: 4315985 (1982-02-01), Castellani
patent: 4919768 (1990-04-01), Bladon
patent: 4927505 (1990-05-01), Sharma et al.
patent: 5126016 (1992-06-01), Glenning et al.
patent: 5151168 (1992-09-01), Gilton et al.
patent: 5591480 (1997-01-01), Weisman et al.
"NiFe/Cu Seed Layer for Plating Coil Cu in Magnetic Recording Heads", IBM Technical Disclosure Bulletin, vol. 38, No. 06, Jun. 1995, p. 625.
"Process for Fabrication of High Resolution Plated Layers", IBM Technical Disclosure Bulletin, vol. 26, No. 7A, Dec. 1983, p. 3357.

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