TaN integrated circuit (IC) capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S532000, C257S535000, C257SE21396, C438S437000, C427S079000

Reexamination Certificate

active

07573086

ABSTRACT:
A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride based material and a layer of patterned polysilicon.

REFERENCES:
patent: 5652176 (1997-07-01), Maniar et al.
patent: 6012336 (2000-01-01), Eaton et al.
patent: 6117747 (2000-09-01), Shao et al.
patent: 6686237 (2004-02-01), Wofford et al.
patent: 6710391 (2004-03-01), Houston
patent: 6806196 (2004-10-01), Wofford et al.
patent: 6872659 (2005-03-01), Sinha
patent: 6900128 (2005-05-01), Sinha
patent: 6960365 (2005-11-01), Ning

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