Tamper-resistant semiconductor device

Details Tamper-resistant semiconductor device Tamper-resistant semiconductor device

2006-02-15

2009-06-16

Chu, Chris C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23142, C257S211000, C257S679000, C257S758000, C326S008000, C438S253000

Reexamination Certificate

active

07547973

ABSTRACT:
The semiconductor device of the present invention includes: first defensive wiring provided above a diffusion isolation layer formed in a substrate or a well, arranged at a minimum wiring pitch allowable in fabrication to cover the diffusion isolation layer; a plurality of signal wiring layers formed above the first defensive wiring; and means for applying a predetermined signal to the first defensive wiring and capturing a change in an electrical or physical property of the first defensive wiring.

REFERENCES:
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Mori R et al.: “Superdistribution: The Concept and the Architecture” Transactions of the Institute of Electronics, information and Communication Engineers of Japan, vol. E73, No. 7, Jul. 1990, pp. 133-146, XP002010383.

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