Tamper memory cell

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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Details

C365S210130, C365S189050, C307S100000

Reexamination Certificate

active

10783935

ABSTRACT:
A circuit includes a volatile memory array and a logic circuit operable to detect a memory array tamper situation and generate at least one control signal responsive thereto. Circuitry associated with each of the individual cells within the volatile memory array responds to the at least one control signal by destroying any data stored by the associated memory cell. Data is destroyed using one of several options including: shorting a true node of the latch to a complement node of the latch, shorting the true and complement nodes of the latch to a bit line and a complement bit line, shorting one of the true/complement nodes of the latch to a reference voltage, shorting both the true and complement nodes of the latch to at least one reference voltage, coupling a first and second positive reference voltage inputs to a positive/ground voltage supply, or shorting the bit line to a reference voltage while the pass gate is activated.

REFERENCES:
patent: 5047985 (1991-09-01), Miyaji
patent: 5159571 (1992-10-01), Ito et al.
patent: 5226011 (1993-07-01), Yanagisawa
patent: 5276647 (1994-01-01), Matsui et al.
patent: 5297094 (1994-03-01), Rastegar
patent: 5311477 (1994-05-01), Rastegar
patent: 5373466 (1994-12-01), Landeta et al.
patent: 5668770 (1997-09-01), Itoh et al.
patent: 5774411 (1998-06-01), Hsieh et al.
patent: 5781482 (1998-07-01), Sakata
patent: 5991207 (1999-11-01), Sedlak et al.
patent: 6041003 (2000-03-01), Casper et al.
patent: 6157578 (2000-12-01), Brady
patent: 6469930 (2002-10-01), Murray
patent: 6724648 (2004-04-01), Khellah et al.
patent: 6963499 (2005-11-01), Rimondi et al.
patent: 2002/0016914 (2002-02-01), Seki et al.
patent: 2004/0223362 (2004-11-01), Coker

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