Coating processes – With post-treatment of coating or coating material – Heating or drying
Reexamination Certificate
2004-02-04
2010-02-09
Meeks, Timothy (Department: 1792)
Coating processes
With post-treatment of coating or coating material
Heating or drying
C427S248100, C427S331000, C427S350000, C427S372200, C438S769000, C438S775000
Reexamination Certificate
active
07658973
ABSTRACT:
A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.
REFERENCES:
patent: 5939763 (1999-08-01), Hao et al.
patent: 6323143 (2001-11-01), Yu
patent: 6372578 (2002-04-01), Muramatsu
patent: 6372581 (2002-04-01), Bensahel et al.
patent: 6383875 (2002-05-01), Thakur
patent: 2002/0073925 (2002-06-01), Noble et al.
patent: 2002/0119674 (2002-08-01), Thakur
patent: 2002/0197884 (2002-12-01), Niimi et al.
patent: 2004/0002226 (2004-01-01), Burnham et al.
patent: 43 33 160 (1995-03-01), None
patent: WO99/43023 (1999-10-01), None
Bensahel,D, et al.“Front-end, single wafer diffusion processing for advanced 300-mm fabrication lines.” Microelectronics Engineering, Elsevier Publishers BV., Amersterdam, NL, vol. 56, No. 1-2, May 2001, pp. 4-59.
Lo. G, Q, et al. “Effects of post-nitridation anneals on radiation hardness in rapid thermal nitrided gate oxides.”
PCT Search Report for PCT Application No. PC/US2004/003442. Mailed on Apr. 7, 2005., (9 pages).
Sagnes, I, et al. “Controlled Thin Oxidation and Nitridation in a Single Wafer Cluster Tool” Materials Research Society Symposium Proceedings, Materials Research Society, Pittsburg, PA, US. vol. 387, Apr. 17, 1995 pp. 253-258.
Su, H. P., et al. “High-Performance Nitrided Oxides Fabricated by Very-Low-Pressure Nitridation Technique” Japanese Journal of Applied Physics, vol. 34, No. 4A, Apr. 1, 1995 pp. 1816-1821.
PCT Search Report, PCT/US2004/003442, mailed Aug. 25, 2004, (6 pages).
Ito, T., et al., “Direct Thermal Nitridation of Silicon Dioxide Films In Anhydrous Ammonia Gas,” J. Electrochem Soc.: Solid-State and Technology/Optical Properties, vol. 127, No. 9, Sep. 1980, pp. 2053-2057.
Ito, T., et al., “Retardation of Destructive Breakdown of SiO2Films Annealed in Ammonia Gas,” J. Electrochem Soc.: Solid-State and Technology/Ammonia Gas, vol. 127, No. 10, Sep. 1980, pp. 2248-2251.
Lek, C. M., et al., “Impact of Decoupled Plasma Nitridation of Ultra-Thin Gate Oxide on the Performance of P-Channel MOSFETs,” Institute of Physics Publishing, Semicond. Sci. Technol., vol. 17, 2002, pp. L25-L28.
First Office Action from Chinese Patent Application No. 200480005652.9 mailed Mar. 23, 2007, 18 pgs.
Second Office Action from Chinese Patent Application No. 200480005652.9 mailed Aug. 31, 2007, 22 pgs.
Third Office Action from Chinese Patent Application No. 200480005652.9 mailed Mar. 21, 2008, 4 pgs.
Final Decision of Rejection from Chinese Patent Application No. 200480005652.9 mailed Jun. 27, 2008, 36 pgs.
Lepert Arnaud
Miner Gary E.
Narwankar Pravin K.
Applied Materials Inc.
Blakely & Sokoloff, Taylor & Zafman
Gambetta Kelly M
Meeks Timothy
LandOfFree
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