Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-10-09
2007-10-09
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257SE21633, C257SE21634, C438S301000
Reexamination Certificate
active
11021649
ABSTRACT:
The present invention facilitates semiconductor fabrication by providing methods of fabrication that tailor applied strain profiles to channel regions of transistor devices. A strain profile is selected for the channel regions (104). Recessed regions are formed (106) in active regions of a semiconductor device after formation of gate structures according to the selected strain profile. A recess etch (106) is employed to remove a surface portion of the active regions thereby forming the recess regions. Subsequently, a composition controlled recess structure is formed (108) within the recessed regions according to the selected strain profile. The recess structure is comprised of a strain inducing material, wherein one or more of its components are controlled and/or adjusted during formation (108) to tailor the applied vertical channel strain profile.
REFERENCES:
patent: 6673694 (2004-01-01), Borenstein
patent: 6753555 (2004-06-01), Takagi et al.
patent: 6774409 (2004-08-01), Baba et al.
patent: 6787793 (2004-09-01), Yoshida
patent: 6806151 (2004-10-01), Wasshuber et al.
patent: 7026232 (2006-04-01), Koontz et al.
patent: 2003/0080361 (2003-05-01), Murthy et al.
patent: 2004/0173790 (2004-09-01), Yeo et al.
patent: 2004/0173815 (2004-09-01), Yeo et al.
patent: 2004/0188760 (2004-09-01), Skotnicki et al.
Brady III W. James
McLarty Peter K.
Sarkar Asok Kumar
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Tailoring channel strain profile by recessed material... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Tailoring channel strain profile by recessed material..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tailoring channel strain profile by recessed material... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3902041