TAB bonded semiconductor device having off-chip power and ground

Details TAB bonded semiconductor device having off-chip power and ground TAB bonded semiconductor device having off-chip power and ground

1990-09-04

1991-10-22

Hille, Rolf

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 69, 357 70, 357 80, 361393, 361404, H01L 2302, H01L 2312, H01L 3902, H01L 2944

Patent

active

050600524

ABSTRACT:
In a TAB bonded semiconductor device, off-chip power and ground distribution is provided by electrically conductive leads spanning across the face of the semiconductor device. Means for supporting at least one TAB lead carrying a power or ground signal across the face of the semiconductor device to an external bonding site is positioned in a central portion of the chip bonding area. In accordance with one embodiment of the invention, a semiconductor device is provided having a plurality of bonding pads arrayed on at least two sides of a face surface thereon. At least one TAB lead is bonded to a bonding pad on a first side of the face surface and spans across the face surface and is bonded to a bonding pad located in a second side of the face surface. An interior tape section overlies a central portion of the face surface supporting the TAB lead.

REFERENCES:
patent: 4209355 (1980-06-01), Burns
patent: 4631820 (1986-12-01), Harada et al.
patent: 4701781 (1987-10-01), Sankhagowit
patent: 4731700 (1988-03-01), Woodward et al.
patent: 4912547 (1990-03-01), Bilowith et al.
patent: 4937656 (1990-06-01), Kohara

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