Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-05-27
2008-05-27
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S094000, C365S185200
Reexamination Certificate
active
07379332
ABSTRACT:
An integrated circuit memory device includes programmed memory cells and programmable and erasable memory cells. The memory device includes a first memory array block in which programmed memory cells are arranged and a second memory array block in which programmable and erasable memory cells are arranged. The programmed memory cells in the first memory array block may be programmed with predetermined data during a semiconductor manufacturing process, and may be mask read-only memory (ROM) cells. The programmable and erasable memory cells in the second memory array block may be programmed or erased with predetermined data after the semiconductor manufacturing process, and may be electrically erasable and programmable read-only memory (EEPROM) cells or flash memory cells.
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Chung Chil-hee
Lee Byeong-Hoon
Hoang Huan
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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