Systems and methods using non-volatile memory cells

Details Systems and methods using non-volatile memory cells Systems and methods using non-volatile memory cells

2005-05-24

2005-05-24

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S239000, C257S295000, C257S296000, C257S314000, C257S315000

Reexamination Certificate

active

06897506

ABSTRACT:
Described in this disclosure is a non-volatile memory cell. The non-volatile memory cell generally includes a short-range atomic order substrate, a dielectric positioned adjacent to the substrate, and a non-floating gate positioned adjacent to the dielectric.

REFERENCES:
patent: 5818083 (1998-10-01), Ito
patent: 6057194 (2000-05-01), Fulford et al.
patent: 6188114 (2001-02-01), Gardner et al.
patent: 20030153189 (2003-08-01), Ko et al.
patent: 20030224597 (2003-12-01), Hu

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