Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-05-17
2011-05-17
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S653000, C438S654000, C438S655000, C438S656000, C438S657000, C257S165000, C257S002000
Reexamination Certificate
active
07943501
ABSTRACT:
A method of forming (and apparatus for forming) tantalum silicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.
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Garber Charles D
Micro)n Technology, Inc.
Sene Pape
Wells St. John P.S.
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