Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-21
2009-06-09
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C118S715000, C257SE21001
Reexamination Certificate
active
07544615
ABSTRACT:
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer deposition process (a vapor deposition process that includes a plurality of deposition cycles) with a refractory metal precursor compound, an organic amine, and an optional silicon precursor compound.
REFERENCES:
patent: 4608271 (1986-08-01), Hieber et al.
patent: 4766066 (1988-08-01), Gaczi
patent: 5087593 (1992-02-01), Narula
patent: 5256244 (1993-10-01), Ackerman
patent: 5350719 (1994-09-01), Narula et al.
patent: 5453527 (1995-09-01), Baldus et al.
patent: 5576579 (1996-11-01), Agnello et al.
patent: 5742322 (1998-04-01), Cranton et al.
patent: 5849071 (1998-12-01), Derbenwick et al.
patent: 5908947 (1999-06-01), Vaartstra
patent: 5916634 (1999-06-01), Fleming et al.
patent: 5919522 (1999-07-01), Baum et al.
patent: 5981331 (1999-11-01), Tsunemine
patent: 5997949 (1999-12-01), Nicolet et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6117692 (2000-09-01), Kim et al.
patent: 6143081 (2000-11-01), Shinriki et al.
patent: 6153519 (2000-11-01), Jain et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6271094 (2001-08-01), Boyd et al.
patent: 6273951 (2001-08-01), Vaartstra
patent: 6277436 (2001-08-01), Stauf et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6335049 (2002-01-01), Basceri
patent: 6342445 (2002-01-01), Marsh
patent: 6348412 (2002-02-01), Vaartstra
patent: 6351036 (2002-02-01), Stumborg et al.
patent: 6387764 (2002-05-01), Curtis et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6461982 (2002-10-01), DeBoer et al.
patent: 6479364 (2002-11-01), Shin et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6527855 (2003-03-01), DelaRosa et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6585823 (2003-07-01), Van Wijck
patent: 6586330 (2003-07-01), Ludviksson et al.
patent: 6590251 (2003-07-01), Kang et al.
patent: 6683381 (2004-01-01), Harada
patent: 6703708 (2004-03-01), Werkhoven et al.
patent: 6706115 (2004-03-01), Leskeläet al.
patent: 6730164 (2004-05-01), Vaartstra et al.
patent: 6794284 (2004-09-01), Vaartstra
patent: 6846516 (2005-01-01), Yang et al.
patent: 6884466 (2005-04-01), Kaloyeros et al.
patent: 6967159 (2005-11-01), Vaartstra
patent: 6995081 (2006-02-01), Vaartstra
patent: 7122464 (2006-10-01), Vaartstra
patent: 7196007 (2007-03-01), Vaartstra
patent: 7300870 (2007-11-01), Vaartstra
patent: 2002/0086111 (2002-07-01), Byun et al.
patent: 2003/0188682 (2003-10-01), Tois et al.
patent: 2003/0211736 (2003-11-01), Ludviksson et al.
patent: 2004/0096582 (2004-05-01), Wang et al.
patent: 2006/0048711 (2006-03-01), Vaartstra
patent: 2006/0292788 (2006-12-01), Vaartstra
patent: 2007/0144438 (2007-06-01), Vaartstra
patent: 2007/0166999 (2007-07-01), Vaartstra
patent: 2008/0102629 (2008-05-01), Vaartstra
patent: 0 442 704 (1991-08-01), None
patent: 1 205 574 (2002-05-01), None
patent: 63109172 (1988-05-01), None
patent: 03-183776 (1991-08-01), None
patent: WO 01/40541 (2001-06-01), None
Alén et al., “Tert-butylamine and allylamine as reductive nitrogen sources in atomic layer deposition of TaN thin films,”J. Mater. Res., 2002, Jan.; 17(1):107-13.
Aselage, “Preparation and Properties of Icosahedral Borides,”The Physics and Chemistry of Carbides; Nitrides and Borides, R. Freer, ed., 1990, 185:97-111.
Atomic Layer Deposition (ALD 2002) Conference, Aug. 19-21, 2002, at Hanyang University in Seoul, Korea, Conference Schedule [online] [retrieved Jul. 8, 2003]. Retrieved from the Internet:<URL:http://www.avs.org/conferences/ald/2002/program/aug19.html>; 3 pgs.
Atomic Layer Deposition (ALD 2002) Conference, Aug. 19-21, 2002, at Hanyang University in Seoul, Korea, Oral and slide Presentations [CD-ROM]. Available online from the Internet:<URL:https://www.avs.org/conferences/ald/2002cd—form.html: 2 CDs.
Bachmann et al., “Characterization and Properties of Artificially Grown Diamond,”Diamond and Diamond-Like Films and Coatings, R.E. Clausing et al., eds., 1991; 266:677-713.
Badzian et al., “Graphite-Boron Nitride Solid Solutions by Chemical Vapor Desposition,”Proceedings of the 3rdInternational Conference on Chemical Vapor Deposition, F.A. Glaski, ed.1972; 747-53.
Bouteville et al., “LPCVD of Ta and Ti disilicides. TaCl2solid source-selectivity of TiSi2growth,”Proc. Eur. Conf. Chem. Vap. Deposition, R. Porat, ed., Jerusalem, Israel, 1987, Mar. 29-Apr. 3; 6:264-9.
Chen et al., “Electrical Properties of the System: Boron-Nitrogen-Carbon,”Proceedings of the 3rdInternational Carbon Conference, 1980; 44-7.
Chen et al., “Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications,”J. Mater. Res., May 1999; 14(5): 2043-52.
Chen et al., “Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization,”J. Vac. Sci. Technol., Jan./Feb. 1999,;B17(1):182-5.
Cho et al., “Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization,”J. Electrochem. Soc., 1999; 146(10):3724-30.
Conde et al., “Influence of carbon content on the crystallographic structure of boron carbide films,”Surface and Coatings Technology, 2000; 125:141-6.
Conde et al., “Boron carbide thin films prepared by CO2laser assisted chemical vapour deposition,”Protective Coatings and Thin Films: Synthesis, Characterization and Applications, ASI Series, Y. Pauleau et al., eds., Dordrecht, The Netherlands, 1996, May 30-Jun. 5; title page, publication page, table of contents, 21:99-109.
Cullity,Elements of X-Ray Diffraction, 2ndEdition, 1978; cover page, publication page, table of contents only; 6 pgs.
Dekempeneer et al., “Tribological and structural properties of amorphous B-N-C coatings,”Surface and Coatings Technology, 1996; 86-87:581-5.
Dinescu et al., “Boron carbon nitride films deposited by sequential pulses laser deposition,”Applied Surface Science, 1998; 127-129:692-6.
Dubovik et al., “High Temperature Boron Carbonitride Based Ceramics,”Journal of the Less-Common Metals, 1986; 117:265-9.
Emin, “Icosahedral boron-rich solids,”Physics Today, 1987, Jan., 40(1):55-62.
Gordon et al., “Vapor deposition of metal oxides and silicates: possible gate insulators for future microelectronics,”Chem. Mater., 2001, 13(8):2463-4. Published online Jul. 10, 2001.
Hara et al., “Barrier Properties for Oxygen Diffusion in a TaSiN Layer,”Jpn. J. Appl.-Phys., 1997; 36(7B), L893-L895.
Hawley,The Condensed Chemical Dictionary, 10thEdition, Van Nostrand Reinhold Co., New York, 1981; 225-226.
Hieber et al., “Possible Applications of Tantalum Silicide For Very-Large-Scale Integration Techology,”Thin Solid Films, 1986; 140:131-5.
Hendrix et al., “Composition control of Hf1-xSixO2films deposited on Si by chemical-vapor deposition using amide precursors,”Appl. Phys. Lett., Apr. 1, 2002; 80(13):2362-4.
X-ray Photoelectron Spectroscopy (XPS) Database, Version 3.2 (Web Version), [online]. [retrieved Nov. 26, 2002]. Retrieved from the Internet: <http://srdata.nist.gov/xps/>. 1 page.
NIST WebBook, [online]. [retrieved Dec. 12, 2002]. Retrieved from the Internet: <http://webbook.nist.gov/>. 2 pages.
Juppo, “Atomic Layer Deposition of Metal and Transition Metal Nitride Thin Films and In Situ Mass Spectrometry Studies,” Dissertation, Dec. 14, 2001, University of Helsinki, Department of Chemistry, Helsinki, Finland; 1-65.
Kaner et al., “Boron-Carbon-Nitrogen Materials of Graphite-Like Structure,”Materials Research Bulletin, 1987; 22(3):399-404.
Kawaguchi, “B/C/N Materials Based on the Graphite Network,”Advanced Material
Coleman W. David
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
LandOfFree
Systems and methods of forming refractory metal nitride... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Systems and methods of forming refractory metal nitride..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods of forming refractory metal nitride... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4123427