Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-27
2007-11-27
Coleman, David W. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21006, C118S715000
Reexamination Certificate
active
11214533
ABSTRACT:
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer deposition process (a vapor deposition process that includes a plurality of deposition cycles) with a refractory metal precursor compound, an organic amine, and an optional silicon precursor compound.
REFERENCES:
patent: 4608271 (1986-08-01), Hieber et al.
patent: 4766006 (1988-08-01), Gaczi
patent: 5087593 (1992-02-01), Narula
patent: 5256244 (1993-10-01), Ackerman
patent: 5350719 (1994-09-01), Narula et al.
patent: 5453527 (1995-09-01), Baldus et al.
patent: 5576579 (1996-11-01), Agnello et al.
patent: 5742322 (1998-04-01), Cranton et al.
patent: 5849071 (1998-12-01), Derbenwick et al.
patent: 5908947 (1999-06-01), Vaartstra
patent: 5916634 (1999-06-01), Fleming et al.
patent: 5919522 (1999-07-01), Baum et al.
patent: 5981331 (1999-11-01), Tsunemine
patent: 5997949 (1999-12-01), Nicolet et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6117692 (2000-09-01), Kim et al.
patent: 6143081 (2000-11-01), Shinriki et al.
patent: 6153519 (2000-11-01), Jain et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6271094 (2001-08-01), Boyd et al.
patent: 6273951 (2001-08-01), Vaartstra
patent: 6277436 (2001-08-01), Stauf et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6335049 (2002-01-01), Basceri
patent: 6342445 (2002-01-01), Marsh
patent: 6348412 (2002-02-01), Vaartstra
patent: 6351036 (2002-02-01), Stumborg et al.
patent: 6387764 (2002-05-01), Curtis et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6461982 (2002-10-01), DeBoer et al.
patent: 6479364 (2002-11-01), Shin et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6527855 (2003-03-01), DelaRosa et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6585823 (2003-07-01), Van Wijck
patent: 6586330 (2003-07-01), Ludviksson et al.
patent: 6590251 (2003-07-01), Kang et al.
patent: 6683381 (2004-01-01), Harada
patent: 6703708 (2004-03-01), Werkhoven et al.
patent: 6706115 (2004-03-01), Leskelä et al.
patent: 6730164 (2004-05-01), Vaartstra et al.
patent: 6794284 (2004-09-01), Vaartstra
patent: 6846516 (2005-01-01), Yang et al.
patent: 6884466 (2005-04-01), Kaloyeros et al.
patent: 6967159 (2005-11-01), Vaartstra
patent: 6995081 (2006-02-01), Vaartstra
patent: 7122464 (2006-10-01), Vaartstra
patent: 7196007 (2007-03-01), Vaartstra
patent: 2002/0086111 (2002-07-01), Byun et al.
patent: 2003/0188682 (2003-10-01), Tois et al.
patent: 2003/0211736 (2003-11-01), Ludviksson et al.
patent: 2004/0043151 (2004-03-01), Vaartstra
patent: 2004/0043600 (2004-03-01), Vaartstra
patent: 2004/0096582 (2004-05-01), Wang et al.
patent: 2005/0028733 (2005-02-01), Vaartstra
patent: 2005/0032360 (2005-02-01), Vaartstra
patent: 2006/0048711 (2006-03-01), Vaartstra
patent: 0 442 704 (1991-08-01), None
patent: 1 205 574 (2002-05-01), None
patent: 63109172 (1988-05-01), None
patent: 03-183776 (1991-08-01), None
patent: WO 01/40541 (2001-06-01), None
Marika Juppo, “Atomic Layer Deposition of Metal and Transition Metal Nitride Thin Films and In Situ Mass Spectrometry Studies”, Dissertation, University of Helsinki, Department of Chemistry, Dec. 14, 2001, pp. 1-65, Helsinki, Finland.
U.S. Appl. No. 11/513,968, filed Aug. 31, 2006, Vaartstra.
“Atomic Layer Deposition (ALD 2002) Conference, Aug. 19-21, 2002, at Hanyang University in Seoul, Korea,” Conference Schedule [online] [retrieved Jul. 8, 2003]. Retrieved from the Internet:<URL:http://www.avs.org/conferences/ald/2002/program/aug19.html>; 3 pgs.
“Atomic Layer Deposition (ALD 2002) Conference, Aug. 19-21, 2002, at Hanyang University in Seoul, Korea,” Oral and slide Presentations [CD-ROM]. Available online from the Internet:<URL:https://www.avs.org/conferences/ald/2002/cd—form.html: 2 CDs.
Gordon et al., “Vapor deposition of metal oxides and silicates: possible gate insulators for future microelectronics,”Chem. Mater., 2001, 13(8):2463-4. Published online Jul. 10, 2001.
Hendrix et al., “Composition control of Hf1−xSixO2films deposited on Si by chemical-vapor deposition using amide precursors,”Appl. Phys. Lett., Apr. 1, 2002; 80(13):2362-4.
Lee et al., “High-k gate dielectric applications using ALD Hf-based oxides,”Solid State Technology, Jan. 2003; 46(1): 45-6, 56.
Liu et al., “Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone,”Mat Res Soc Symp Proc, 2003;765:97-102.
Maruyama et al., “Silicon dioxide thin films prepared by chemical vapor deposition from tetrakis (dimethylamino) silane and ozone,”Appl. Phys. Lett., Aug. 2, 1993; 63(5):611-13.
Ohshita et al., “HfO2growth by low-pressure chemical vapor deposition using the Hf(N(C2H5)2)4/O2gas system,”Journal of Crystal Growth, Nov. 2001; 233:292-7.
Ohshita et al., “Using tetrakis-diethylamido-hafnium for HfO2thin-film growth in low-pressure chemical vapor deposition,”Thin Solid Films, Mar. 1, 2002; 406:215-18.
Ritala et al., “Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources,”Science, Apr. 14, 2000; 288:319-21.
Suzuki et al., “Atomic Layer Deposition of HfO2using Hf(N(C2H5)2)4and O3,” Poster Presentation,ALD 2002 Conference, Hanyang University, Seoul, Aug. 14, 2002; 14 pages.
Vaartstra et al., Syntheses and Structures of a Series of Very Low Coordinate Barium Compounds: Ba[N(SiMe3)2]2(THF)2, {Ba[N(SiMe3)2]2(THF)}2, and {Ba[N(SiMe3)2]2}2,Inorg. Chem., Jan. 9, 1991; 30:121-5.
Alén et al., “Tert-butylamine and allylamine as reductive nitrogen sources in atomic layer deposition of TaN thin films,”J. Mater. Res., Jan. 2002; 17(1):107-13.
Aselage, “Preparation and Properties of Icosahedral Borides,”The Physics and Chemistry of Carbides; Nitrides and Borides, R. Freer, ed., 1990, 185:97-111.
Backmann et al., “Characterization and Properties of Artificially Grown Diamond,”Diamond and Diamond-Like Films and Coatings, R.E. Clausing et al., eds., 1991; 266:677-713.
Badzian et al., “Graphite-Boron Nitride Solid Solutions by Chemical Vapor Desposition,”Proceedings of the 3rdInternational Conference on Chemical Vapor Deposition, F.A. Glaski, ed.1972; 747-53.
Bouteville et al., “LPCVD of Ta and Ti disilicides. TaCl2solid sourcc—selectivity of TiSi2growth,”Proc. Eur. Conf. Chem. Vap. Deposition, R. Porat, ed., Jerusalem, Israel, 1987, Mar. 29-Apr. 3; 6:264-9.
Chen et al., “Electrical Properties of the System: Boron-Nitrogen-Carbon,”Proceedings of the 3rdInternational Carbon Conference, 1980; 44-7.
Chen et al., “Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromie for integrated circuitry copper metallization applications,”J. Mater. Res., May 1999; 14(5): 2043-52.
Chen et al., “Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization.”J. Vac. Sci. Technol., Jan./Feb. 1999;B 17(1):182-5.
Cho et al., “Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization,”J. Electrochem. Soc., 1999; 146(10):3724-30.
Conde et al., “Influence of carbon content on the crystallographic structure of boron carbide films,”Surface and Coatings Technology, 2000; 125:141-6.
Conde et al.,“Boron carbide thin films prepared by CO2laser assisted chemical vapour deposition,”Protective Coatings and Thin Films: Synthesis, Characterization and Applications, ASI Series, Y. Pauleau et al., eds., Dordrecht, The Netherlands, May 30-Jun. 5, 1996; title page, publication page, table of contents, 21:99-109.
Cullity,Elements of X-Ray Diffraction, 2ndEdition, 1978; cover page, publication page, table of contents only; 6 pgs.
Dekemp
Coleman David W.
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
LandOfFree
Systems and methods of forming refractory metal nitride... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Systems and methods of forming refractory metal nitride..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods of forming refractory metal nitride... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3866139