Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-17
2006-10-17
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S648000, C438S653000, C438S656000, C438S680000, C438S685000, C438S765000, C438S775000, C438S785000
Reexamination Certificate
active
07122464
ABSTRACT:
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.
REFERENCES:
patent: 4766006 (1988-08-01), Gaczi
patent: 5087593 (1992-02-01), Narula
patent: 5256244 (1993-10-01), Ackerman
patent: 5350719 (1994-09-01), Narula et al.
patent: 5453527 (1995-09-01), Baldus et al.
patent: 5576579 (1996-11-01), Agnello et al.
patent: 5742322 (1998-04-01), Cranton et al.
patent: 5849071 (1998-12-01), Derbenwick et al.
patent: 5908947 (1999-06-01), Vaartstra
patent: 5916634 (1999-06-01), Fleming et al.
patent: 5919522 (1999-07-01), Baum et al.
patent: 5981331 (1999-11-01), Tsunemine
patent: 5997949 (1999-12-01), Nicolet et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6117692 (2000-09-01), Kim et al.
patent: 6143081 (2000-11-01), Shinriki et al.
patent: 6153519 (2000-11-01), Jain et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6271094 (2001-08-01), Boyd et al.
patent: 6273951 (2001-08-01), Vaartstra
patent: 6277436 (2001-08-01), Stauf et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6335049 (2002-01-01), Basceri
patent: 6342445 (2002-01-01), Marsh
patent: 6348412 (2002-02-01), Vaartstra
patent: 6351036 (2002-02-01), Stumborg et al.
patent: 6387764 (2002-05-01), Curtis et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6479364 (2002-11-01), Shin et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6527855 (2003-03-01), DelaRosa et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6585823 (2003-07-01), Van Wijck
patent: 6590251 (2003-07-01), Kang et al.
patent: 6683381 (2004-01-01), Harada
patent: 6703708 (2004-03-01), Werkhoven et al.
patent: 6706115 (2004-03-01), Leskelä et al.
patent: 6730164 (2004-05-01), Vaartstra et al.
patent: 6794284 (2004-09-01), Vaartstra
patent: 6846516 (2005-01-01), Yang et al.
patent: 6884466 (2005-04-01), Kaloyeros et al.
patent: 6967159 (2005-11-01), Vaartstra
patent: 6995081 (2006-02-01), Vaartstra
patent: 2002/0086111 (2002-07-01), Byun et al.
patent: 2003/0188682 (2003-10-01), Tois et al.
patent: 2003/0190423 (2003-10-01), Yang et al.
patent: 2003/0198587 (2003-10-01), Kaloyeros et al.
patent: 2004/0043151 (2004-03-01), Vaartstra
patent: 2004/0043600 (2004-03-01), Vaartstra
patent: 2004/0096582 (2004-05-01), Wang et al.
patent: 2005/0028733 (2005-02-01), Vaartstra
patent: 2005/0287804 (2005-12-01), Vaartstra
patent: 2006/0048711 (2006-03-01), Vaartstra
patent: 0 442 704 (1991-08-01), None
patent: 63109172 (1988-05-01), None
patent: 03-183776 (1991-08-01), None
Alén et al., “Tert-butylamine and allylamine as reductive nitrogen sources in atomic layer deposition of TaN thin films,”J. Mater. Res., Jan. 2002; 17(1):107-13.
Aselage, “Preparation and Properties of Icosahedral Borides,”The Physics and Chemistry of Carbides; Nitrides and Borides, R. Freer, ed., 1990, 185:97-111.
Backmann et al., “Characterization and Properties of Artificially Grown Diamond,”Diamond and Diamond-Like Films and Coatings, R.E. Clausing et al., eds., 1991; 266:677-713.
Badzian et al., “Graphite-Boron Nitride Solid Solutions by Chemical Vapor Desposition,”Proceedings of the 3rdInternational Conference on Chemical Vapor Deposition, F.A. Glaski, ed.1972; 747-53.
Bouteville et al., “LPCVD of Ta and Ti disilicides. TaCl2solid source—selectivity of TiSi2growth,”Proc. Eur. Conf. Chem. Vap. Deposition, R. Porat, ed., Jerusalem, Israel, Mar. 29-Apr. 3, 1987; 6:264-9.
Chen et al., “Electrical Properties of the System: Boron-Nitrogen-Carbon,”Proceedings of the 3rdInternational Carbon Conference, 1980; 44-7.
Chen et al., “Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications,”J. Mater. Res., May 1999; 14(5): 2043-52.
Chen et al., “Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization,”J. Vac. Sci. Technol., Jan./Feb. 1999; B 17(1):182-5.
Cho et al., “Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization,”J. Electrochem. Soc., 1999; 146(10):3724-30.
Conde et al., “Influence of carbon content on the crystallographic structure of boron carbide films,”Surface and Coatings Technology, 2000; 125:141-6.
Conde et al.,“Boron carbide thin films prepared by CO2laser assisted chemical vapour deposition,”Protective Coatings and Thin Films: Synthesis, Characterization and Applications, ASI Series, Y. Pauleau et al., eds., Dordrecht, The Netherlands, May 30-Jun. 5, 1996; title page, publication page, table of contents, 21:99-109.
Cullity,Elements of X-Ray Diffraction, 2ndEdition, 1978; cover page, publication page, table of contents only; 6 pgs.
Dekempeneer et al., “Tribological and structural properties of amorphous B-N-C coatings,”Surface and Coatings Technology, 1996; 86-87:581-5.
Dinescu et al., “Boron carbon nitride films deposited by sequential pulses laser deposition,”Applied Surface Science, 1998; 127-129:692-6.
Dubokiv et al., “High Temperature Boron Carbonitride Based Ceramics,”Journal of the Less-Common Metals, 1986; 117:265-9.
Emin, “Icosahedral boron-rich solids,”Physics Today, Jan. 1987, 40(1):55-62.
Hara et al., “Barrier Properties for Oxygen Diffusion in a TaSiN Layer,”Jpn. J. Appl.-Phys., 1997; 36(7B), L893-L895.
Hawley,The Condensed Chemical Dictionary, 10thEdition, Van Nostrand Reinhold Co., New York, 1981; 225-226.
Hieber et al., “Possible Applications of Tantalum Silicide For Very-Large-Scale Integration Techology,”Thin Solid Films, 1986; 140:131-5.
X-ray Photoelectron Spectroscopy (XPS) Database, Version 3.0 (Web Version), [online]. [retrieved Nov. 26, 2002]. Retrieved from the Internet: <http://srdata.nist.gov/xps/>. 1 page.
NIST WebBook, [online]. [retrieved Dec. 12, 2002]. Retrieved from the Internet: <http://webbook.nist.gov/>. 2 pages.
Kaner et al., “Boron-Carbon-Nitrogen Materials of Graphite-Like Structure,”Materials Research Bulletin, 1987; 22:399-404.
Kawaguchi, “B/C/N Materials Based on the Graphite Network,”Advanced Materials, 1997; 9(8):615-25.
Knotek et al., “Mechanical and Tribological Properties of Thin Films Produced by Sputtering Within the B-N-C Triangle,”Hard Coatings Based on Borides, Carbides and Nitrides, A. Kumar et al., eds., Warrendale, Pennsylvania, title page, table of contents, 1998; 169-78.
Kolawa et al., “Tantalum-based diffusion barriers in Si/Cu VLSI metallizations,”J. Appl. Phys., Aug. 1, 1991; 70(3):1369-73.
Lee et al., “Structural and chemical stability of Ta-Si-N thin film between Si and Cu,”Thin Solid Films, 1998; 320:141-6.
Moore et al., “Properties and characterization of codeposited boron nitride and carbon materials,”Journal of Applied Physics, Jun. 15, 1989; 65(12):5109-118.
Newport et al., “The dual source APCVD of titanium nitride thin films from reaction of hexamethyldisilazane and titanium tetrachloride,”J. Mater. Chem., 2002; 12:1906-9.
Oliveira et al., “Deposition of boron carbide by laser CVD: a comparison with thermodynamic predictions,”Solid Thin Films, 1997; 307:29-37.
Oliveira et al., “Synthesis and properties of BxCyNzcoatings,”J. Mater. Res., 2001; 16(3):734-43.
Oliveira et al., “XPS investigatino of BxCyNzcoatings deposited by laser assisted chemical vapour desposition,”Surface&Coatings Tehcnology, 1998, 100-101:398-403.
Redlich et al., “B-C-N nanotubes and boron doping of carbon nanotubes,”Chemical Physics Letters, Sep. 27, 1996; 2
Lebentritt Michael
Lee Kyoung
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
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