Systems and methods for UV lithography

Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Analysis and verification

Reexamination Certificate

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Details

C716S054000, C700S120000, C700S121000, C430S005000, C378S035000

Reexamination Certificate

active

08006202

ABSTRACT:
A method of designing a lithographic mask for use in lithographic processing of a substrate is disclosed. The lithographic processing comprises irradiating mask features of a lithographic mask using a predetermined irradiation configuration. In one aspect, the method comprises obtaining an initial design for the lithographic mask comprising a plurality of initial design features having an initial position. The method further comprises applying at least one shift to at least one initial design feature and deriving there from an altered design so as to compensate for shadowing effects when irradiating the substrate using a lithographic mask corresponding to the altered design in the predetermined irradiation configuration. Also disclosed herein are a corresponding design, a method of setting up lithographic processing, a system for designing a lithographic mask, a lithographic mask, and a method of manufacturing it.

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