Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-08-16
2011-08-16
Karls, Shay (Department: 3723)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C015S077000, C451S043000
Reexamination Certificate
active
07998865
ABSTRACT:
A system (500) removes wafer edge residue from a target wafer (508). A wafer holding mechanism (502) holds and rotates the target wafer (508). A residue remover mechanism (504) mechanically interacts or abrades an edge surface of the target wafer (508) and removes strongly adhered residue from the edge surface of the target wafer (508). The residue remover mechanism (504) controls coverage of the mechanical interaction and magnitude of the mechanical interaction.
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Griffin, Jr. Alfred J.
Kirkpatrick Brian K.
Tran Joe G.
Brady III Wade J.
Franz Warren L.
Karls Shay
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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