Systems and methods for reducing contact to gate shorts

Details Systems and methods for reducing contact to gate shorts Systems and methods for reducing contact to gate shorts

2006-12-21

2010-02-02

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S384000, C257SE29127

Reexamination Certificate

active

07655986

ABSTRACT:
A method for reducing contact to gate shorts in a semiconductor device and the resulting semiconductor device are described. In one embodiment, a gate is formed on a substrate, a contact is formed on the gate and the substrate, and an insulator is formed between the gate and the contact. The insulator may be formed by oxidizing the gate to form a dielectric between the contact and the gate after the contact is formed on the gate.

REFERENCES:
patent: 5792703 (1998-08-01), Bronner et al.
patent: 6274468 (2001-08-01), Hsu
patent: 6294449 (2001-09-01), Wu et al.
patent: 7294890 (2007-11-01), Lo et al.
patent: 2003/0116808 (2003-06-01), Oguchi
patent: 2003/0141554 (2003-07-01), Uehara et al.

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