Systems and methods for reading and writing a magnetic...

Details Systems and methods for reading and writing a magnetic... Systems and methods for reading and writing a magnetic...

2008-04-01

2008-04-01

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07352614

ABSTRACT:
An MRAM cell comprises a magnetic metal layer and a magnetic sensing device in close proximity to the magnetic metal layer. One end of the magnetic metal layer is coupled with a word line transistor, while the other end of the magnetic metal layer is coupled to a first bit line. The magnetic sensing device can be coupled with a second bit line. The magnetic metal layer can be used to both program and read the cell, eliminating the need for a second current lien in the cell.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6034887 (2000-03-01), Gupta et al.
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6490191 (2002-12-01), Pochmuller
patent: 6545906 (2003-04-01), Savtchneko et al.
patent: 6606263 (2003-08-01), Tang
patent: 6657889 (2003-12-01), Subramanian et al.
patent: 6845038 (2005-01-01), Shukh
patent: 6888753 (2005-05-01), Kakoschke et al.

Affiliated with

Also associated with

Rating

Systems and methods for reading and writing a magnetic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Systems and methods for reading and writing a magnetic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods for reading and writing a magnetic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2756760