Systems and methods for plasma etching

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S795000, C204S298160

Reexamination Certificate

active

07425504

ABSTRACT:
Systems and methods are disclosed for processing a semiconductor substrate by depositing a conductive layer on the substrate; patterning a set of insulating structures on the substrate; selectively back-biasing the substrate; depositing a layer of material on the substrate; and removing a part of the conductive layer selectively biased to attract cation bombardment.

REFERENCES:
patent: 6962648 (2005-11-01), Nagashima et al.

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