Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2006-09-12
2006-09-12
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
C438S795000, C438S798000, C438S962000, C438S759000, C257S734000, C257S746000, C257SE51040, C977S742000, C977S843000, C977S743000
Reexamination Certificate
active
07105428
ABSTRACT:
The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
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Duan Xiangfeng
Dubrow Robert S.
Goldman Jay L.
Mostarshed Shahriar
Niu Chunming
Filler Andrew L.
Jefferson Quovaunda
Nanosys Inc.
Smith Matthew
Sterne, Kessler, Goldstein and Fox PLLC
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