Static information storage and retrieval – Read/write circuit – Particular write circuit
Reexamination Certificate
2008-09-03
2010-06-01
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Particular write circuit
C365S189050, C365S194000, C365S189120, C365S233100
Reexamination Certificate
active
07729182
ABSTRACT:
Embodiments of the present invention include circuitry for issuing address and data signals to a memory array using a system clock and a write clock. A locked loop may be used to compensate for additional delay experienced by the system clock relative to write clock and ensure synchronization of the clock signals. A write latch enable block may be used to develop a write latch enable signal for issuance along with a corresponding address signal. The write latch enable signal can be timed such that it arrives at an appropriate time to issue the data corresponding to the issued address.
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Brian Johnson, Brent Keeth, Feng Lin and Hua Zheng; “Phase-Tolerant Latency Control for a Combination 512Mb 1.0Gb/s/pin GDDR3 and 2.5Gb/s/pin GDDR SDRAM”; 2007 IEEE International Solid-State Circuits Conference, Session 27, DRAM and eRAM; pp. 494-495 & 617.
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Bringivijayaraghavan Venkatraghavan
Brown Jason
Dinh Son
Dorsey & Whitney LLP
Micro)n Technology, Inc.
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