Systems and methods for ion implantation of semiconductor wafers

Details Systems and methods for ion implantation of semiconductor wafers Systems and methods for ion implantation of semiconductor wafers

1985-09-09

1988-03-22

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504431, 2504421, 118730, G21K 508

Patent

active

047330910

ABSTRACT:
A dual mechanical movement scanning system for ion implantation includes a radial scan arm which is mounted at a fixed pivot point external to the system vacuum chamber and penetrates the chamber and supports the wafer paddle or wheel within the chamber. The fast-scan component is provided by rotation of the paddle on the support arm; the slow-scan component is provided by pivotal movement of the scan arm itself. The drive system which reciprocally pivots the radial scan arm is configured geometrically so that controlled movement of one arm of the drive system is translated as l/r velocity of the rotational axis relative to the beam path. The wafer paddle can be constructed to provide a variable implant angle and to use a component of centrifugal force to hold the wafers in place without clamps or other mechanical means.

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