Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1986-09-09
1988-05-10
Fields, Carolyn E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504922, 250398, H01J 37317
Patent
active
047437677
ABSTRACT:
An ion implantation system includes a beam generating arrangement for generating an ion beam characterized by good beam stability and for directing the ion beam along a prearranged path. A beam stopping arrangement is disposed in the path of the beam for stopping and collecting the ions in the beam. A workpiece scanning arrangement is positioned upstream of the beam stopping arrangement for scanning a workpiece through the beam in a prearranged combined fast scan directional motion and a slow scan directional motion with the slow scan directional motion being characterized by an end of scan position in which the ion beam falls completely on the beam stopping arrangement. A dose measuring arrangement is coupled to the beam stopping arrangement and includes arrangements for measuring the ion beam current on the beam stop at the end of scan position of the workpiece scanning arrangement, for calculating the average ion beam current striking the workpiece during each slow scan directional motion as the average of two successive ion beam current measurements before and after the motion, and for calculating the ion dose delivered to the workpiece based on the calculated average ion beam current and know geometrical factors associated with the fast and slow scan motions.
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T. C. Smith, Wafer Cooling and Photoresist Masking Problems in Iion Implanation, Motorola MOS Group/Advanced Product R&D Labs, Mesa, Ariz. 85202, U.S.A., date unknown.
Aitken Derek
Bright Nicholas J.
Harrison Bernard
Plumb Frederick
Wright Christopher
Applied Materials Inc.
Fields Carolyn E.
Miller John A.
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