Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-10-16
2011-10-11
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S482000, C219S121610
Reexamination Certificate
active
08034698
ABSTRACT:
The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths. An exemplary method includes generating laser beam pulses having energy beam characteristics, directing a first pulse onto a first optical path, modulating the pulse's energy beam characteristics, and irradiating at least a portion of a first region of the thin film with the pulse to induce crystallization of the portion of the first region. The method also includes directing a second pulse onto a second optical path, modulating the pulse's energy beam characteristics so as to be different from the energy beam characteristics of the first pulse, and irradiating at least a portion of a second region of the thin film with the second pulse to induce crystallization of the portion of the second region.
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Perkins Pamela E
Smith Zandra
The Trustees of Columbia University in the City of New York
Wilmer Cutler Pickering Hale and Dorr LLP
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