Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-12-20
2010-06-22
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S487000, C977S700000, C977S742000
Reexamination Certificate
active
07741197
ABSTRACT:
The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
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Bernatis Paul
Duan Xiangfeng
Fischer-Colbrie Alice
Hamilton James M.
Lemmi Francesco
Brown Valerie
Filler Andrew L.
Nanosys Inc.
Nguyen Ha Tran T
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