Coating apparatus – Gas or vapor deposition
Reexamination Certificate
2005-06-07
2005-06-07
Lund, Jeffrie R. (Department: 1763)
Coating apparatus
Gas or vapor deposition
C118S666000, C118S724000, C118S725000, C118S730000, C156S345270, C156S345290, C156S345330, C156S345370, C156S345520, C156S345550
Reexamination Certificate
active
06902622
ABSTRACT:
Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead.
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Johnsgard Kristian E.
Johnsgard Mark W.
Mailho Robert D.
Messineo Daniel L.
Sallows David E.
Dority & Manning P.A.
Lund Jeffrie R.
Mattson Technology Inc.
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