Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2011-04-26
2011-04-26
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S014000, C438S010000, C438S917000, C438S233000, C257SE21521, C257SE21520, C257SE21526, C257SE21531
Reexamination Certificate
active
07932105
ABSTRACT:
Systems and methods for detecting and monitoring Nickel-silicide process and induced failures. In a first method embodiment, a method of characterizing a Nickel-silicide semiconductor manufacturing process includes accessing a test chip including a parallel coupled chain of transistors, wherein the transistors are designed for inducing stress into Nickel-silicide features of the transistors, and for increasing a probability of a manufacturing failure of the Nickel-silicide features. A biasing voltage is applied to one terminal of the parallel coupled chain, all other terminals of the parallel coupled chain and grounded, and current is measured at each of the all other terminals of the parallel coupled chain. This process is repeated for each terminal of the parallel coupled chain. The measured currents from all possible conduction paths are compared to determine a manufacturing defect in the parallel coupled chain of transistors.
REFERENCES:
patent: 6049213 (2000-04-01), Abadeer
patent: 2006/0172443 (2006-08-01), Ramappa
Karbasi Hossein
Park Jae-Yong
Saxena Sharad
Shieh Benjamin
Spinelli Mark
Liu Benjamin Tzu-Hung
Ngo Ngan
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