Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-29
2010-12-21
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S421000, C438S622000, C257S758000, C257SE21581, C257SE23144
Reexamination Certificate
active
07855139
ABSTRACT:
Systems and methods for controlling the effective dielectric constant of materials used in a semiconductor device are shown and described. In one embodiment, a method comprises providing a semiconductor substrate with a plurality of pillars formed thereon, depositing a first layer of dielectric material over a plurality of pillars, removing a portion of the first layer deposited over the plurality of pillars, and depositing a second layer of dielectric material over the plurality of pillars, where the second layer leaves a plurality of voids between the plurality of pillars.
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Crawford Latanya
Fulbright & Jaworski L.L.P.
Landau Matthew C
Sematech Inc.
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